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1/14 july 2005 stgp10nc60kd - stgf10nc60kd STGB10NC60KD n-channel 10a - 600v - to-220/to-220fp/d 2 pak short circuit rated powermesh? igbt table 1: general features lower on-voltage drop (v cesat ) off losses include tail current lower c res / c ies ratio switching losses include diode recovery energy very soft ultra fast recovery antiparallel diode new generation products with tighter parameter distrubution description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the pow - ermesh ? igbts, with outstanding performances. the suffix ?k? identifies a family optimized for high frequency motor control applications with short cir - cuit withstand capability. applications high frequency motor controls smps and pfc in both hard switch and resonant topologies motor drivers table 2: order codes figure 1: package figure 2: internal schematic diagram type v ces v ce(sat) (max) @25c i c @100c STGB10NC60KD stgf10nc60kd stgp10nc60kd 600 v 600 v 600 v < 2.5 v < 2.5 v < 2.5 v 10 a 6 a 10 a 1 2 3 to-220fp to-220 1 2 3 1 3 d 2 pak sales type marking package packaging STGB10NC60KDt4 gb10nc60kd d 2 pak tape & reel stgf10nc60kd gf10nc60kd to-220fp tube stgp10nc60kd gp10nc60kd to-220 tube rev. 2
stgp10nc60kd - STGB10NC60KD - stgf10nc60kd 2/14 table 3: absolute maximum ratings ( )pulse width limited by max. junction temperature. table 4: thermal data electrical characteristics (t case =25c unless otherwise specified) table 5: main parameters (#) calculated according to the iterative formula: symbol parameter value unit STGB10NC60KD stgp10nc60kd stgf10nc60kd v ces collector-emitter voltage (v gs = 0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c = 25c (#) 20 9 a i c collector current (continuous) at t c = 100c (#) 10 6 a i cm ( ) collector current (pulsed) 40 a i f diode rms forward current at t c = 25c 10 a p tot total dissipation at t c = 25c 60 25 w derating factor 0.48 0.20 w/c v iso insulation withstand voltage a.c.(t = 1 sec; tc = 25c) -- 2500 v t stg storage temperature ? 55 to 150 c t j operating junction temperature min. ty p. max. rthj-case thermal resistance junction-case to-220 d2pak 2.08 c/w to-220fp 5.0 c/w rthj-amb thermal resistance junction-ambient 62.5 c/w t l maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec.) 300 c symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 1 ma, v ge = 0 600 v i ces collector cut-off current (v ge = 0) v ce = max rating, t c = 25c v ce =max rating, t c = 125c 10 1 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20v , v ce = 0 100 na v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 5 7 v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 5a v ge = 15v, i c = 5a, tc= 125c 2 1.8 2.5 v v i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () -------------------------------------------------------------------------------------------------- =
3/14 stgp10nc60kd - STGB10NC60KD - stgf10nc60kd electrical characteristics (continued) table 6: dynamic table 7: switching on table 8: switching off table 9: switching energy (1) pulsed: pulse duration = 300 s, duty cycle 1.5% (2) eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts & diode are at the same temperature (25c and 125c) (3)turn-off losses include also the tail of the collector current. symbol parameter test conditions min. typ . max. unit g fs (1) forward transconductance v ce = 15 v , i c = 5 a 15 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25v, f = 1 mhz, v ge = 0 380 46 8.5 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 390 v, i c = 5 a, v ge = 15v, (see figure 20) 19 5 9 nc nc nc t scw short circuit withstand time v ce = 0.5 v br(ces) , tj = 125c r g = 10 , v ge = 12v 10 s symbol parameter test conditions min. typ . max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 5 a r g = 10 , v ge = 15v, tj= 25c (see figure 18) 17 6 655 ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 5 a r g = 10 , v ge = 15v, tj=125c (see figure 18) 16.5 6.5 575 ns ns a/s symbol parameter test conditions min. typ. max. unit t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 5 a, r ge = 10 , v ge = 15 v t j = 25 c (see figure 18) 33 72 82 ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 5 a, r ge = 10 , v ge = 15 v tj = 125 c (see figure 18) 60 106 136 ns ns ns symbol parameter test conditions min. typ. max. unit eon (2) e off (3) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 75 a r g = 10 , v ge = 15v, tj= 25c (see figure 18) 55 85 140 j j j eon (2) e off (3) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 5 a r g = 10 , v ge = 15v, tj= 125c (see figure 18) 87 162 249 j j j
stgp10nc60kd - STGB10NC60KD - stgf10nc60kd 4/14 table 10: collector-emitter diode symbol parameter test conditions min. typ . max. unit v f forward on-voltage i f = 2.5 a i f = 2.5 a, tj = 125 c 1.6 1.3 2.1 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 5 a ,v r = 30 v, tj = 25c, di/dt = 100 a/ s (see figure 6) 23.5 16.5 1.4 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 5 a ,v r = 30 v, tj =125c, di/dt = 100 a/ s (see figure 6) 39 39 2 ns nc a
5/14 stgp10nc60kd - STGB10NC60KD - stgf10nc60kd figure 3: output characteristics figure 4: transconductance figure 5: collector-emitter on voltage vs col - lector current figure 6: transfer characteristics figure 7: collector-emitter on voltage vs tem - perature figure 8: normalized gate threshold vs tem - perature
stgp10nc60kd - STGB10NC60KD - stgf10nc60kd 6/14 figure 9: normalized breakdown voltage vs temperature figure 10: capacitance variations figure 11: total switching losses vs gate re - sistance figure 12: gate charge vs gate-emitter volt - age figure 13: total switching losses vs temper - ature figure 14: total switching losses vs collector current
7/14 stgp10nc60kd - STGB10NC60KD - stgf10nc60kd figure 15: turn-off soa figure 16: thermal impedance figure 17: emitter-collector diode characteristics
stgp10nc60kd - STGB10NC60KD - stgf10nc60kd 8/14 figure 18: test circuit for inductive load switching figure 19: switching waveforms figure 20: gate charge test circuit figure 21: diode recovery times waveform
9/14 stgp10nc60kd - STGB10NC60KD - stgf10nc60kd dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stgp10nc60kd - STGB10NC60KD - stgf10nc60kd 10/14 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
11/14 stgp10nc60kd - STGB10NC60KD - stgf10nc60kd tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stgp10nc60kd - STGB10NC60KD - stgf10nc60kd 12/14 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
13/14 stgp10nc60kd - STGB10NC60KD - stgf10nc60kd figure 22: revision history date revision description of changes 14-jun-2005 1 new release 19-jul-2005 2 complete version
stgp10nc60kd - STGB10NC60KD - stgf10nc60kd 14/14 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subjec t t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are no t a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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